LARGE DIFFUSION LENGTH ENHANCEMENT IN SILICON BY RAPID THERMAL CODIFFUSION OF PHOSPHORUS AND ALUMINUM

被引：19

作者：

HARTITI, B

SLAOUI, A

MULLER, JC

SIFFERT, P

机构：

[1] Centre de Recherches Nucléaires (IN2P3), Laboratoire Phase (UPR du CNRS No 292), 67037 Strasbourg Cedex 2

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.109786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of simultaneous diffusion of phosphorus and aluminum in crystalline silicon on the minority carrier diffusion length as measured by the surface photovoltage technique. The diffusion is carried out by using a tungsten halogen lamp furnace (rapid thermal processing). We have shown that more than 100% bulk diffusion length improvement can be achieved in both float zone and Czochralski silicon material. The different contributions to this enhancement are discussed.

引用

页码：1249 / 1251

页数：3

共 13 条

[1]

Bruton T. M., 1991, Tenth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P667

[2] THE USE OF RAPID THERMAL ANNEALING FOR STUDYING CONTAMINATION IN SILICON [J].