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LOW-TEMPERATURE GETTERING OF CU, AG, AND AU ACROSS A WAFER OF SI BY AL
被引:65
作者
:
THOMPSON, RD
论文数:
0
引用数:
0
h-index:
0
THOMPSON, RD
TU, KN
论文数:
0
引用数:
0
h-index:
0
TU, KN
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1982年
/ 41卷
/ 05期
关键词
:
D O I
:
10.1063/1.93565
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:440 / 442
页数:3
相关论文
共 14 条
[1]
DIFFUSION PIPES IN SILICON NPN STRUCTURES
BARSON, F
论文数:
0
引用数:
0
h-index:
0
BARSON, F
HESS, MS
论文数:
0
引用数:
0
h-index:
0
HESS, MS
ROY, MM
论文数:
0
引用数:
0
h-index:
0
ROY, MM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(02)
: 304
-
&
[2]
BOLTAKS BI, 1961, SOV PHYS-SOL STATE, V2, P2383
[3]
GETTERING RATES OF VARIOUS FAST-DIFFUSING METAL IMPURITIES AT ION-DAMAGED LAYERS ON SILICON
BUCK, TM
论文数:
0
引用数:
0
h-index:
0
BUCK, TM
HSIEH, CM
论文数:
0
引用数:
0
h-index:
0
HSIEH, CM
POATE, JM
论文数:
0
引用数:
0
h-index:
0
POATE, JM
PICKAR, KA
论文数:
0
引用数:
0
h-index:
0
PICKAR, KA
[J].
APPLIED PHYSICS LETTERS,
1972,
21
(10)
: 485
-
&
[4]
Chu WK., 1978, BACKSCATTERING SPECT
[5]
DICHMAN JM, 1979, J APPL PHYS, V50, P2689
[6]
DIFFUSION OF GOLD IN SILICON - A NEW MODEL
GOSELE, U
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER
GOSELE, U
MOREHEAD, F
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER
MOREHEAD, F
FRANK, W
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER
FRANK, W
SEEGER, A
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER
SEEGER, A
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(03)
: 157
-
159
[7]
DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
: 379
-
&
[8]
HABIT AND MORPHOLOGY OF COPPER PRECIPITATES IN SILICON
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
POPONIAK, MR
论文数:
0
引用数:
0
h-index:
0
POPONIAK, MR
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(05)
: 2067
-
&
[9]
GOLD GETTERING IN SILICON BY PHOSPHORUS DIFFUSION AND ARGON IMPLANTATION - MECHANISMS AND LIMITATIONS
LECROSNIER, D
论文数:
0
引用数:
0
h-index:
0
LECROSNIER, D
PAUGAM, J
论文数:
0
引用数:
0
h-index:
0
PAUGAM, J
PELOUS, G
论文数:
0
引用数:
0
h-index:
0
PELOUS, G
RICHOU, F
论文数:
0
引用数:
0
h-index:
0
RICHOU, F
SALVI, M
论文数:
0
引用数:
0
h-index:
0
SALVI, M
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(08)
: 5090
-
5097
[10]
TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATION OF GROWTH OF COPPER PRECIPITATE COLONIES IN SILICON
NES, E
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSLO,INST PHYS,OSLO 3,NORWAY
NES, E
WASHBURN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSLO,INST PHYS,OSLO 3,NORWAY
WASHBURN, J
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(08)
: 3682
-
3688
←
1
2
→
共 14 条
[1]
DIFFUSION PIPES IN SILICON NPN STRUCTURES
BARSON, F
论文数:
0
引用数:
0
h-index:
0
BARSON, F
HESS, MS
论文数:
0
引用数:
0
h-index:
0
HESS, MS
ROY, MM
论文数:
0
引用数:
0
h-index:
0
ROY, MM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(02)
: 304
-
&
[2]
BOLTAKS BI, 1961, SOV PHYS-SOL STATE, V2, P2383
[3]
GETTERING RATES OF VARIOUS FAST-DIFFUSING METAL IMPURITIES AT ION-DAMAGED LAYERS ON SILICON
BUCK, TM
论文数:
0
引用数:
0
h-index:
0
BUCK, TM
HSIEH, CM
论文数:
0
引用数:
0
h-index:
0
HSIEH, CM
POATE, JM
论文数:
0
引用数:
0
h-index:
0
POATE, JM
PICKAR, KA
论文数:
0
引用数:
0
h-index:
0
PICKAR, KA
[J].
APPLIED PHYSICS LETTERS,
1972,
21
(10)
: 485
-
&
[4]
Chu WK., 1978, BACKSCATTERING SPECT
[5]
DICHMAN JM, 1979, J APPL PHYS, V50, P2689
[6]
DIFFUSION OF GOLD IN SILICON - A NEW MODEL
GOSELE, U
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER
GOSELE, U
MOREHEAD, F
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER
MOREHEAD, F
FRANK, W
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER
FRANK, W
SEEGER, A
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 1,FED REP GER
SEEGER, A
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(03)
: 157
-
159
[7]
DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
论文数:
0
引用数:
0
h-index:
0
HALL, RN
RACETTE, JH
论文数:
0
引用数:
0
h-index:
0
RACETTE, JH
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
: 379
-
&
[8]
HABIT AND MORPHOLOGY OF COPPER PRECIPITATES IN SILICON
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
POPONIAK, MR
论文数:
0
引用数:
0
h-index:
0
POPONIAK, MR
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(05)
: 2067
-
&
[9]
GOLD GETTERING IN SILICON BY PHOSPHORUS DIFFUSION AND ARGON IMPLANTATION - MECHANISMS AND LIMITATIONS
LECROSNIER, D
论文数:
0
引用数:
0
h-index:
0
LECROSNIER, D
PAUGAM, J
论文数:
0
引用数:
0
h-index:
0
PAUGAM, J
PELOUS, G
论文数:
0
引用数:
0
h-index:
0
PELOUS, G
RICHOU, F
论文数:
0
引用数:
0
h-index:
0
RICHOU, F
SALVI, M
论文数:
0
引用数:
0
h-index:
0
SALVI, M
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(08)
: 5090
-
5097
[10]
TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATION OF GROWTH OF COPPER PRECIPITATE COLONIES IN SILICON
NES, E
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSLO,INST PHYS,OSLO 3,NORWAY
NES, E
WASHBURN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSLO,INST PHYS,OSLO 3,NORWAY
WASHBURN, J
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(08)
: 3682
-
3688
←
1
2
→