THE USE OF RAPID THERMAL ANNEALING FOR STUDYING CONTAMINATION IN SILICON

被引：3

作者：

HARTITI, B

SLAOUI, A

MULLER, JC

SIFFERT, P

机构：

[1] Laboratoire de Physique et Applications des Semiconducteurs (PHASE), Centre de Recherches Nucléaire, F-67037 Strasbourg Cédex

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 10卷 / 04期

关键词：

D O I：

10.1016/0921-5107(91)90109-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Contamination of silicon wafers by transition metals is known to degrade device performance sharply. Transition metal contamination can arise from several sources. Here, we present a fast method to detect contamination consisting of the combination of rapid thermal annealing which is known to activate metallic impurities and diffusion length measurements by the surface photovoltage technique which needs no permanent contacts.

引用

页码：L11 / L14

页数：4

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