ON THE ORIGIN OF RAPID THERMAL-PROCESS INDUCED RECOMBINATION CENTERS IN SILICON

被引：22

作者：

EICHHAMMER, W

QUAT, VT

SIFFERT, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3857 / 3865

页数：9

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