HIGH-PURITY THERMAL-TREATMENT OF SILICON

被引：10

作者：

BORCHARDT, G

WEBER, E

WIEHL, N

机构：

[1] UNIV COLOGNE,INST PHYS 2,MET PHYS ABT,D-5000 COLOGNE 41,FED REP GER

[2] UNIV COLOGNE,INST KERNCHEM,D-5000 COLOGNE 41,FED REP GER

[3] SONDERFORSCH BEREICH 126,GOTTINGEN,FED REP GER

来源：

关键词：

D O I：

10.1063/1.329650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1603 / 1604

页数：2

共 16 条

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CHANG T, 1978, NBS26059 PUBL

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ELSTNER, L ;

KAMPRATH, W .

PHYSICA STATUS SOLIDI, 1967, 22 (02) :541-&

[4]

FEICHTINGER H, 1979, ACTA PHYS AUSTRIACA, V51, P161

[5]

FRANK W, 1979, P INT C RAD PHYSICS

[6]

LEE YH, 1977, APPL PHYS LETT, V31, P142, DOI 10.1063/1.89630

[7]

LEE YH, 1979, I PHYS C SER, V46, P52

[8] THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON [J].

LESKOSCHEK, W ;

FEICHTINGER, H ;

VIDRICH, G .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :601-610

[9]

RIOTTE HG, 1980, RADIOCHIM ACTA, V27, P209

[10]

RIOTTE HG, UNPUBLISHED