THERMALLY INDUCED DEFECTS IN N-TYPE AND P-TYPE SILICON

被引：44

作者：

LESKOSCHEK, W ^{[1
]}

FEICHTINGER, H ^{[1
]}

VIDRICH, G ^{[1
]}

机构：

[1] UNIV GRAZ, PHYS INST, GRAZ, AUSTRIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 20卷 / 02期

关键词：

D O I：

10.1002/pssa.2210200222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：601 / 610

页数：10

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