COMPARISON OF INTRINSIC GETTERING AND EPITAXIAL WAFERS IN TERMS OF SOFT ERROR ENDURANCE AND OTHER CHARACTERISTICS OF 64K BIT DYNAMIC RAM

被引：10

作者：

IWAI, H ^{[1
]}

OTSUKA, H ^{[1
]}

MATSUMOTO, Y ^{[1
]}

HISATOMI, K ^{[1
]}

AOKI, K ^{[1
]}

机构：

[1] TOSHIBA CORP, DIV INTEGRATED CIRCUIT, SEMICOND DEVICE ENGN LAB, KAWASAKI 210, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1149 / 1151

页数：3

共 9 条

[1]

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[5] THE EFFECT OF SUBSTRATE MATERIALS ON HOLDING TIME DEGRADATION IN MOS DYNAMIC RAM [J].

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[7]

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[8] SOFT ERROR IMPROVEMENT IN MOS RAMS BY THE USE OF EPITAXIAL SUBSTRATE [J].

SATOH, S ;

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[9] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

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