HIGH OXYGEN CZOCHRALSKI SILICON CRYSTAL-GROWTH RELATIONSHIP TO EPITAXIAL STACKING-FAULTS

被引：36

作者：

KATZ, LE

HILL, DW

机构：

来源：

关键词：

D O I：

10.1149/1.2131639

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1151 / 1155

页数：5

共 15 条

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[4] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS
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KECK, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887
[5] KAMPER J, 1970, J ELECTROCHEM SOC, V117, P261
[6] CONCENTRATION AND BEHAVIOR OF CARBON IN SEMICONDUCTOR SILICON
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AKIYAMA, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) : 1566 - +
[7] PATEL JR, 1977, SEMICONDUCTOR SILICO, P521
[8] Pearce C.W., 1977, SEMICONDUCTOR SILICO, P606
[9] PETROFF PM, 1977, SEMICONDUCTOR SILICO, P761
[10] PETROFF PM, COMMUNICATION