THE EFFECT OF SUBSTRATE MATERIALS ON HOLDING TIME DEGRADATION IN MOS DYNAMIC RAM

被引：15

作者：

OTSUKA, H ^{[1
]}

WATANABE, K ^{[1
]}

NISHIMURA, H ^{[1
]}

IWAI, H ^{[1
]}

NIHIRA, H ^{[1
]}

机构：

[1] TOSHIBA CORP,SEMICOND DEVICE ENGN LAB,KAWASAKI 210,JAPAN

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 07期

关键词：

D O I：

10.1109/EDL.1982.25530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：182 / 184

页数：3

共 11 条

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[6] EVIDENCE FOR IMPACT-IONIZED ELECTRON INJECTION IN SUBSTRATE OF N-CHANNEL MOS STRUCTURES [J].

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APPLIED PHYSICS LETTERS, 1978, 33 (04) :335-337

[7] DESIGN LIMITATIONS DUE TO SUBSTRATE CURRENTS AND SECONDARY IMPACT IONIZATION ELECTRONS IN NMOS LSIS [J].

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[8]

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[9] GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J].

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[10]

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