GETTERING OF GOLD BY RAPID THERMAL-PROCESSING

被引：11

作者：

HARTITI, B

VUTHUONGQUAT

EICHHAMMER, W

MULLER, JC

SIFFERT, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 09期

关键词：

D O I：

10.1063/1.101626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：873 / 875

页数：3

共 17 条

[1]

BORISENKO VE, 1983, MATER RES SOC S P, V13, P375

[2] GETTERING OF GOLD IN SILICON - A TOOL FOR UNDERSTANDING THE PROPERTIES OF SILICON INTERSTITIALS [J].

BRONNER, GB ;

PLUMMER, JD .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (12) :5286-5298

[3] DIFFUSION OF ION-IMPLANTED GOLD IN P-TYPE SILICON [J].

COFFA, S ;

CALCAGNO, L ;

CAMPISANO, SU ;

CALLERI, G ;

FERLA, G .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) :6291-6295

[4] IMPURITIES IN SILICON SOLAR-CELLS [J].

DAVIS, JR ;

ROHATGI, A ;

HOPKINS, RH ;

BLAIS, PD ;

RAICHOUDHURY, P ;

MCCORMICK, JR ;

MOLLENKOPF, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :677-687

[5] LASER DAMAGE GETTERING AND ITS APPLICATION TO LIFETIME IMPROVEMENT IN SILICON [J].

HAYAFUJI, Y ;

YANADA, T ;

AOKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :1975-1980

[6]

KERN W, 1970, RCA REV, V31, P187

[7] INFLUENCE OF PHOSPHORUS-INDUCED POINT-DEFECTS ON A GOLD-GETTERING MECHANISM IN SILICON [J].

LECROSNIER, D ;

PAUGAM, J ;

RICHOU, F ;

PELOUS, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1036-1038

[8] GOLD GETTERING IN SILICON BY PHOSPHORUS DIFFUSION AND ARGON IMPLANTATION - MECHANISMS AND LIMITATIONS [J].

LECROSNIER, D ;

PAUGAM, J ;

PELOUS, G ;

RICHOU, F ;

SALVI, M .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5090-5097

[9] PROCESS-INDUCED AND GOLD ACCEPTOR DEFECTS IN SILICON [J].

MESLI, A ;

COURCELLE, E ;

ZUNDEL, T ;

SIFFERT, P .

PHYSICAL REVIEW B, 1987, 36 (15) :8049-8062

[10]

MONKOWSKI JR, 1981, SOLID STATE TECHNOL, V24, P44

← 1 2 →