共 11 条
- [2] ENTROPY FACTOR OF DONOR LEVEL IN GOLD IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 558 - 560
- [3] COFFA S, IN PRESS J ELECTROCH
- [5] DIFFUSION OF GOLD IN SILICON - A NEW MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 157 - 159
- [6] MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON [J]. APPLIED PHYSICS, 1980, 23 (04): : 361 - 368
- [8] ON THE THEORY OF THE DIFFUSION OF GOLD INTO SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (02): : 521 - 529
- [9] DIFFUSION OF GOLD IN SILICON STUDIED BY MEANS OF NEUTRON-ACTIVATION ANALYSIS AND SPREADING-RESISTANCE MEASUREMENTS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02): : 133 - 140
- [10] DIFFUSION OF GOLD IN DISLOCATION-FREE OR HIGHLY DISLOCATED SILICON MEASURED BY THE SPREADING-RESISTANCE TECHNIQUE [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (01): : 37 - 48