DIFFUSION OF ION-IMPLANTED GOLD IN P-TYPE SILICON

被引:23
作者
COFFA, S [1 ]
CALCAGNO, L [1 ]
CAMPISANO, SU [1 ]
CALLERI, G [1 ]
FERLA, G [1 ]
机构
[1] SGS MICROELETTR,CATANIA,ITALY
关键词
D O I
10.1063/1.342087
中图分类号
O59 [应用物理学];
学科分类号
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页码:6291 / 6295
页数:5
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