DIFFUSION OF ION-IMPLANTED GOLD IN P-TYPE SILICON

被引：23

作者：

COFFA, S ^{[1
]}

CALCAGNO, L ^{[1
]}

CAMPISANO, SU ^{[1
]}

CALLERI, G ^{[1
]}

FERLA, G ^{[1
]}

机构：

[1] SGS MICROELETTR,CATANIA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6291 / 6295

页数：5

共 11 条

[1] PROPERTIES OF GOLD IN SILICON
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[2] ENTROPY FACTOR OF DONOR LEVEL IN GOLD IMPLANTED SILICON
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 558 - 560
[3] COFFA S, IN PRESS J ELECTROCH
[4] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM
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[J]. PHYSICAL REVIEW, 1956, 104 (03): : 617 - 618
[5] DIFFUSION OF GOLD IN SILICON - A NEW MODEL
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MOREHEAD, F
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SEEGER, A
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 157 - 159
[6] MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON
GOSELE, U
FRANK, W
SEEGER, A
[J]. APPLIED PHYSICS, 1980, 23 (04): : 361 - 368
[7] SELF-INTERSTITIAL AND VACANCY CONTRIBUTIONS TO SILICON SELF-DIFFUSION DETERMINED FROM THE DIFFUSION OF GOLD IN SILICON
MOREHEAD, F
STOLWIJK, NA
MEYBERG, W
GOSELE, U
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 690 - 692
[8] ON THE THEORY OF THE DIFFUSION OF GOLD INTO SILICON
SEEGER, A
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (02): : 521 - 529
[9] DIFFUSION OF GOLD IN SILICON STUDIED BY MEANS OF NEUTRON-ACTIVATION ANALYSIS AND SPREADING-RESISTANCE MEASUREMENTS
STOLWIJK, NA
SCHUSTER, B
HOLZL, J
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02): : 133 - 140
[10] DIFFUSION OF GOLD IN DISLOCATION-FREE OR HIGHLY DISLOCATED SILICON MEASURED BY THE SPREADING-RESISTANCE TECHNIQUE
STOLWIJK, NA
HOLZL, J
FRANK, W
WEBER, ER
MEHRER, H
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (01): : 37 - 48

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