ENTROPY FACTOR OF DONOR LEVEL IN GOLD IMPLANTED SILICON

被引：7

作者：

COFFA, S

CALLERI, G

CALCAGNO, L

CAMPISANO, SU

FERLA, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.99416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：558 / 560

页数：3

共 13 条

[1] COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS [J].

BALIGA, BJ ;

SUN, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :685-688

[2] ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICON [J].

BROTHERTON, SD ;

LOWTHER, JE .

PHYSICAL REVIEW LETTERS, 1980, 44 (09) :606-609

[3]

BULLIS WM, 1965, SOLID STATE ELECTRON, V143, P9

[4]

Chu W. K., 1978, BACKSCATTERING SPECT

[5]

COFFA S, UNPUB

[6] MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON [J].

GOSELE, U ;

FRANK, W ;

SEEGER, A .

APPLIED PHYSICS, 1980, 23 (04) :361-368

[7] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J].

JACOBONI, C ;

CANALI, C ;

OTTAVIANI, G ;

QUARANTA, AA .

SOLID-STATE ELECTRONICS, 1977, 20 (02) :77-89

[8] DETERMINATION OF THE ENTROPY-FACTOR OF THE GOLD DONOR LEVEL IN SILICON BY RESISTIVITY AND DLTS MEASUREMENTS [J].

KASSING, R ;

COHAUSZ, L ;

VANSTAA, P ;

MACKERT, W ;

HOFFMAN, HJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (01) :41-47

[9] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J].

PALS, JA .

SOLID-STATE ELECTRONICS, 1974, 17 (11) :1139-1145

[10] DIFFUSION OF GOLD IN SILICON STUDIED BY MEANS OF NEUTRON-ACTIVATION ANALYSIS AND SPREADING-RESISTANCE MEASUREMENTS [J].

STOLWIJK, NA ;

SCHUSTER, B ;

HOLZL, J .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02) :133-140

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