DETERMINATION OF THE ENTROPY-FACTOR OF THE GOLD DONOR LEVEL IN SILICON BY RESISTIVITY AND DLTS MEASUREMENTS

被引：15

作者：

KASSING, R

COHAUSZ, L

VANSTAA, P

MACKERT, W

HOFFMAN, HJ

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 34卷 / 01期

关键词：

D O I：

10.1007/BF00617573

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：41 / 47

页数：7

共 19 条

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