ELECTRICAL PROPERTIES OF GOLD-DOPED SILICON

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] BOLTAKS BI, 1960, FIZ TVERD TELA, V2, P2395

[3] PROPERTIES OF GOLD IN SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &

[4] ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLD [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 314 - &

[5] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[6] DIE TEMPERATURABHANGIGKEIT DER DEFEKTELEKTRONENBEWEGLICHKEIT IN SILIZIUMKRISTALLEN [J]. PHYSICA STATUS SOLIDI, 1966, 17 (01): : 139 - &

[7] FAIRFIELD JM, 1965, J ELECTROCHEM SOC, V112, P200

[8] HOFFMANN A, 1961, HALBLEITERPROBLEME, V6, P152

[9] RADIOCHEMISCHE UNTERSUCHUNGEN ZUR DIFFUSION VON GOLD IN SILIZIUM [J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 83 - &

[10] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND MUH-MUD FOR SI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1539 - &

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] BOLTAKS BI, 1960, FIZ TVERD TELA, V2, P2395

[3] PROPERTIES OF GOLD IN SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &

[4] ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLD [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 314 - &

[5] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[6] DIE TEMPERATURABHANGIGKEIT DER DEFEKTELEKTRONENBEWEGLICHKEIT IN SILIZIUMKRISTALLEN [J]. PHYSICA STATUS SOLIDI, 1966, 17 (01): : 139 - &

[7] FAIRFIELD JM, 1965, J ELECTROCHEM SOC, V112, P200

[8] HOFFMANN A, 1961, HALBLEITERPROBLEME, V6, P152

[9] RADIOCHEMISCHE UNTERSUCHUNGEN ZUR DIFFUSION VON GOLD IN SILIZIUM [J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 83 - &

[10] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND MUH-MUD FOR SI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1539 - &