TEMPERATURE DEPENDENCE OF HALL MOBILITY AND MUH-MUD FOR SI

[1] LOW-TEMPERATURE IMPURITY CONDUCTION IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1960, 118 (02): : 411 - 414

[2] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[3] HALL AND DRIFT MOBILITY IN HIGH-RESISTIVITY SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 522 - 523

[4] DEBYE PP, 1956, PHYS REV, V101, P1699

[5] KLEIN CA, 1959, B AMER PHYS SOC 2, V4, P28

[6] GALVANOMAGNETIC EFFECTS IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1960, 118 (02): : 435 - 450

[7] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657

[8] LEE PA, 1958, SEMICONDUCTORS PHOSP, P380

[9] GALVANOMAGNETIC EFFECTS IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1957, 107 (03): : 672 - 677

[10] WEAK-FIELD MAGNETORESISTANCE IN PARA-TYPE SILICON [J]. PHYSICAL REVIEW, 1958, 109 (04): : 1098 - 1102

[1] LOW-TEMPERATURE IMPURITY CONDUCTION IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1960, 118 (02): : 411 - 414

[2] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[3] HALL AND DRIFT MOBILITY IN HIGH-RESISTIVITY SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW, 1957, 105 (02): : 522 - 523

[4] DEBYE PP, 1956, PHYS REV, V101, P1699

[5] KLEIN CA, 1959, B AMER PHYS SOC 2, V4, P28

[6] GALVANOMAGNETIC EFFECTS IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1960, 118 (02): : 435 - 450

[7] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657

[8] LEE PA, 1958, SEMICONDUCTORS PHOSP, P380

[9] GALVANOMAGNETIC EFFECTS IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1957, 107 (03): : 672 - 677

[10] WEAK-FIELD MAGNETORESISTANCE IN PARA-TYPE SILICON [J]. PHYSICAL REVIEW, 1958, 109 (04): : 1098 - 1102