WEAK-FIELD MAGNETORESISTANCE IN PARA-TYPE SILICON

[1] THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (01): : 31 - 37

[2] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] DEXTER, 1956, PHYS REV, V104, P637

[5] DRESSELHAUS, 1955, PHYS REV, V98, P368

[6] SEEBECK EFFECT IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 940 - 947

[7] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961

[8] KANE EO, 1956, J PHYS CHEM SOLIDS, V1, P83

[9] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657

[10] GALVANOMAGNETIC EFFECTS IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1957, 107 (03): : 672 - 677

[1] THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (01): : 31 - 37

[2] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] DEXTER, 1956, PHYS REV, V104, P637

[5] DRESSELHAUS, 1955, PHYS REV, V98, P368

[6] SEEBECK EFFECT IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 940 - 947

[7] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961

[8] KANE EO, 1956, J PHYS CHEM SOLIDS, V1, P83

[9] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1650 - 1657

[10] GALVANOMAGNETIC EFFECTS IN P-TYPE SILICON [J]. PHYSICAL REVIEW, 1957, 107 (03): : 672 - 677