ON THE THEORY OF THE DIFFUSION OF GOLD INTO SILICON

被引：34

作者：

SEEGER, A ^{[1
]}

机构：

[1] UNIV STUTTGART,INST THEORET & ANGEWANDTE PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 61卷 / 02期

关键词：

D O I：

10.1002/pssa.2210610225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：521 / 529

页数：9

共 10 条

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[7] Lambert J. L., 1972, Wissenschaftliche Berichte AEG-Telefunken, V45, P153
[8] Magnus W., 1966, FORMULAS THEOREMS SP, V3rd
[9] GOLD IN SILICON - EFFECT ON RESISTIVITY AND DIFFUSION IN HEAVILY-DOPED LAYERS
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LACHAPELLE, TJ
FORBES, DH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1377 - 1380
[10] MECHANISM OF GOLD DIFFUSION INTO SILICON
WILCOX, WR
LACHAPELLE, TJ
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) : 240 - &