共 19 条
- [2] OXIDATION-INDUCED POINT-DEFECTS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1093 - 1097
- [4] Gosele U., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P55
- [5] DIFFUSION OF GOLD IN SILICON - A NEW MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 157 - 159
- [6] MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON [J]. APPLIED PHYSICS, 1980, 23 (04): : 361 - 368
- [7] GOSELE U, 1981, SEMICONDUCTOR SILICO, P766
- [8] DIFFUSION OF GOLD IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1579 - 1587
- [10] DIFFUSION MECHANISM OF NICKEL AND POINT-DEFECTS IN SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02): : 276 - 280