INFLUENCE OF PHOSPHORUS-INDUCED POINT-DEFECTS ON A GOLD-GETTERING MECHANISM IN SILICON

被引：29

作者：

LECROSNIER, D ^{[1
]}

PAUGAM, J ^{[1
]}

RICHOU, F ^{[1
]}

PELOUS, G ^{[1
]}

机构：

[1] INST UNIV TECHNOL LANNION,PHYS MAT LAB,F-22302 LANNION,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.327732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1036 / 1038

页数：3

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