LONG-RANGE ENHANCEMENT OF BORON DIFFUSIVITY INDUCED BY A HIGH-SURFACE-CONCENTRATION PHOSPHORUS DIFFUSION

被引：16

作者：

LECROSNIER, D

GAUNEAU, M

PAUGAM, J

PELOUS, G

RICHOU, F

机构：

[1] Centre National d'Etudes des Télécommunications

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 03期

关键词：

D O I：

10.1063/1.90738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhanced boron diffusivity of buried implanted layers has been investigated when a shallow diffusion is performed with phosphorus. For low surface phosphorus concentration (<1019/cm3) no diffusion of boron was observed, but for higher values (≳1020/cm3) a strong diffusion occurs. This enhancement is a function of the distance between the boron layer and surface phosphorus diffusion. Results are explained by vacancy-type defects generated during the phosphorus diffusion. A 30-μm diffusion length is found for these defects.

引用

页码：224 / 226

页数：3

共 15 条

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