COMPLETE BASE PROFILE SHAPE IN A PUSHED-OUT DIFFUSED TRANSISTOR ANALYZED BY RADIOTRACER METHODS

被引：9

作者：

JONES, CL ^{[1
]}

WILLOUGHBY, AF ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON ENGN MAT LABS, SOUTHAMPTON, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 02期

关键词：

D O I：

10.1063/1.1655401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：114 / 116

页数：3

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