Anomalous Diffusion Effects in Silicon (A Review)

被引:15
作者
Willoughby, A. F. W. [1 ]
机构
[1] Univ Southampton, Engn Mat Labs, Southampton, Hants, England
关键词
D O I
10.1007/BF00550894
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper is concerned with anomalous diffusion effects in silicon, and particularly with the emitter-dip (or push-out) effect, which occurs in diffused transistors. Several possible mechanisms may be involved in anomalous diffusion and each is discussed, together with relevant experimental and theoretical work. Literature directly on the emitter-dip effect is next reviewed, and finally the author suggests fields of research which may clarify the mechanism or mechanisms involved.
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页码:89 / 98
页数:10
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