ANALYSIS OF PHOSPHORUS-DIFFUSED LAYERS IN SILICON

被引：17

作者：

FAIR, RB

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 02期

关键词：

D O I：

10.1149/1.2131438

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：323 / 327

页数：5

共 9 条

[1]

BECKER WC, UNPUBLISHED

[2] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118

[3]

MASETTI G, 1977, SEMICONDUCTOR SILICO, P648

[4] CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON [J].

MCDONALD, RA ;

EHLENBERGER, GG ;

HUFFMAN, TR .

SOLID-STATE ELECTRONICS, 1966, 9 (08) :807-+

[5] RELATIONSHIP BETWEEN RESISTIVITY AND PHOSPHORUS CONCENTRATION IN SILICON [J].

MOUSTY, F ;

OSTOJA, P ;

PASSARI, L .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4576-4580

[6] KINETICS OF PHOSPHORUS PREDEPOSITION IN SILICON USING POCL3 [J].

NEGRINI, P ;

NOBILI, D ;

SOLMI, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1254-1260

[7] SHALLOW PHOSPHORUS DIFFUSION PROFILES IN SILICON [J].

TSAI, JCC .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1499-&

[8]

TSAI JS, UNPUBLISHED

[9]

WATANABE M, 1974, 6TH P C SOL STAT DEV, P269

← 1 →