KINETICS OF PHOSPHORUS PREDEPOSITION IN SILICON USING POCL3

被引：48

作者：

NEGRINI, P ^{[1
]}

NOBILI, D ^{[1
]}

SOLMI, S ^{[1
]}

机构：

[1] CNR, LAMEL, VIA CASTAGNOLI 1, 40126 BOLOGNA, ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134437

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1254 / 1260

页数：7

共 17 条

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[8] EFFECT OF GAS CONCENTRATIONS IN DIFFUSION OF SILICON FROM A PHOSPHINE SOURCE [J].

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