LASER DAMAGE GETTERING AND ITS APPLICATION TO LIFETIME IMPROVEMENT IN SILICON

[1] DEKOCK AJR, UNPUBLISHED

[2] HAYAFUJI Y, 1978, NOV FALL M JAP SOC A

[3] HAYAFUJI Y, 1977, SEMICONDUCTOR SILICO, P750

[4] HAYAFUJI Y, 1979, OCT EL SOC M LOS ANG

[5] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[6] VIDEO DEFECTS IN CHARGE-COUPLED IMAGE SENSORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) : 585 - 590

[7] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 238 - 240

[8] ICHIDA Y, 1980, ASTM STP721 AM SOC T, P107

[9] KATZ LE, 1979, OCT EL SOC M LOS ANG

[10] KAWADO S, 1975, JPN J APPL PHYS, V14, P407, DOI 10.1143/JJAP.14.407

[1] DEKOCK AJR, UNPUBLISHED

[2] HAYAFUJI Y, 1978, NOV FALL M JAP SOC A

[3] HAYAFUJI Y, 1977, SEMICONDUCTOR SILICO, P750

[4] HAYAFUJI Y, 1979, OCT EL SOC M LOS ANG

[5] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[6] VIDEO DEFECTS IN CHARGE-COUPLED IMAGE SENSORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) : 585 - 590

[7] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 238 - 240

[8] ICHIDA Y, 1980, ASTM STP721 AM SOC T, P107

[9] KATZ LE, 1979, OCT EL SOC M LOS ANG

[10] KAWADO S, 1975, JPN J APPL PHYS, V14, P407, DOI 10.1143/JJAP.14.407