GETTERING OF GOLD IN SILICON - A TOOL FOR UNDERSTANDING THE PROPERTIES OF SILICON INTERSTITIALS

被引：154

作者：

BRONNER, GB ^{[1
]}

PLUMMER, JD ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.338264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5286 / 5298

页数：13

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