EFFECT OF THERMAL NITRIDATION PROCESSES ON BORON AND PHOSPHORUS DIFFUSION IN (100) SILICON

被引：72

作者：

FAHEY, P

DUTTON, RW

MOSLEHI, M

机构：

来源：

关键词：

D O I：

10.1063/1.94445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：683 / 685

页数：3

共 12 条

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[3] NITRIDATION OF SILICON AND OXIDIZED-SILICON
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[7] DEFECTS IN SILICON SUBSTRATES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 17 - 31
[8] KINETICS OF GROWTH OF THE OXIDATION STACKING-FAULTS
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 7996 - 8005
[9] LIN AM, 1983, J ELECTROCHEM SOC, V127, P2243
[10] MOSLEHI M, 1983, 163RD M EL SOC SAN F, V83