ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity

被引：64

作者：

Kim, Woong ^{[1
]}

Chu, Kyo Seon ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 01期

关键词：

GROWTH;

D O I：

10.1002/pssa.200824338

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that drain-source (V(ds)) and gate-source voltages (V(gs)) of a zinc oxide nanowire (ZnO NW) field-effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the "bottom" of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET-based sensors and detectors. A ZnO NW photodetector is most sensitive when V(gs) is positioned at the "bottom" of the subthreshold swing region.0 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：179 / 182

页数：4

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