ZnO nanowire transistors

被引：543

作者：

Goldberger, J

Sirbuly, DJ

Law, M

Yang, P ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Dept Chem, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2005年 / 109卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1021/jp0452599

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V-1 s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off current ratios ranging from 10(5) to 10(7). Four probe measurements show that the resistivity of the Ti/Au-ZnO contacts is 0.002-0.02 Omega-cm. The performance characteristics of the nanowire transistors are intimately tied to the presence and nature of adsorbed surface species. In addition, we describe a dynamic gate effect that seems to involve mobile surface charges and causes hysteresis in the transconductance, among other effects.

引用

页码：9 / 14

页数：6

共 46 条

[1] Field-effect transistors based on single semiconducting oxide nanobelts [J].