Effects of mobility of small islands on growth in molecular-beam epitaxy

被引:29
作者
Furman, I
Biham, O
机构
[1] Racah Institute of Physics, The Hebrew University
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 12期
关键词
ENERGY-ELECTRON-DIFFRACTION; SUBMONOLAYER EPITAXY; 2-DIMENSIONAL ISLANDS; HOMOEPITAXIAL GROWTH; SURFACE-DIFFUSION; SIZE DISTRIBUTION; FRACTAL GROWTH; METAL-SURFACES; RATE-EQUATIONS; STEP-DENSITY;
D O I
10.1103/PhysRevB.55.7917
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of mobility of small islands on island growth in molecular-beam epitaxy are studied. It is shown that mobility of small islands affects both the scaling and morphology of islands during growth. Three microscopic models are considered, in which the critical island sizes are i*=1, 2, and 3 (such that islands of size s less than or equal to i* are mobile, while islands of size s greater than or equal to i*+1 are immobile). As i* increases, islands become more compact, while the exponent gamma, which relates the island density to deposition rate, increases. The morphological changes are quantified by using fractal analysis. It is shown that the fractal dimensions an rather insensitive to changes in i*. However, the prefactors provide a quantitative measure of the changing morphologies.
引用
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页码:7917 / 7926
页数:10
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