Leakage current behaviors of acceptor- and donor-doped (Ba0.5Sr0.5)TiO3 thin films

被引：53

作者：

Kim, SS

Park, C

机构：

[1] Sunchon Natl Univ, Dept Met Engn & Mat Sci, Sunchon 540742, South Korea

[2] Hyundai Elect Ind Co Ltd, Semicond Adv Res Div, Icheon 467860, Kyungki Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 17期

关键词：

D O I：

10.1063/1.125075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of acceptor and donor doping on the leakage current behavior of Pt/(Ba0.5Sr0.5)TiO3/Pt film capacitors prepared by a pulsed-laser deposition method. We selected Mn/Al and Nb as acceptor and donor dopants, respectively. The leakage current behavior depends strongly on the type of dopants. Al doping decreases the leakage current level, and Mn doping decreases it further. Nb doping greatly increases it. The decrease in leakage current associated with acceptor doping seems to partly result from a decrease in tunneling current due to expansion of the depletion layer width. The converse appears to apply with donor doping. (C) 1999 American Institute of Physics. [S0003-6951(99)02843-0].

引用

页码：2554 / 2556

页数：3

共 16 条

[11]

Scott J. F., 1994, Integrated Ferroelectrics, V5, P103, DOI 10.1080/10584589408019334

[12] DIELECTRIC-BREAKDOWN IN HIGH-EPSILON FILMS FOR ULSI DRAMS .3. LEAKAGE CURRENT PRECURSORS AND ELECTRODES [J].

SCOTT, JF .

INTEGRATED FERROELECTRICS, 1995, 9 (1-3) :1-12

[13]

SCOTT JF, 1999, ISIF C P 7 10 MARCH

[14] Characterization of doped BST thin films prepared by a modified sol gel method [J].

Sedlar, M ;

Sayer, M ;

Chivukula, V .

INTEGRATED FERROELECTRICS, 1995, 10 (1-4) :113-121

[15] Growth of (211) BaTiO3 thin films on Pt-coated Si(100) substrates by radio frequency magnetron sputtering [J].

Su, QX ;

Rabson, TA ;

Robert, M ;

Xiong, JXZ ;

Moss, SC .

THIN SOLID FILMS, 1997, 305 (1-2) :227-231

[16]

SZE SM, 1981, PHYSICS SEMICONDUCTO

← 1 2 →