Vapor phase epitaxial liftoff of GaAs and silicon single crystal films

被引：8

作者：

Chang, W ^{[1
]}

Kao, CP ^{[1
]}

Pike, GA ^{[1
]}

Slone, JA ^{[1
]}

Yablonovitch, E ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 58卷 / 02期

关键词：

vapor phase; epitaxial liftoff GaAs; silicon single crystal films; hydrofluoric acid;

D O I：

10.1016/S0927-0248(98)00194-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Among the technologies for integrating GaAs devices with Si VLSI chips, epitaxial liftoff (ELO) is conspicuous for maintaining the quality of the single crystal epitaxial GaAs films. Traditionally, ELO is implemented in aqueous HF solution. It would be cleaner and simpler if ELO could be implemented in a vapor process. In this article, we will present the potential improvements in the ELO process by using a vapor phase etch to undercut thin films. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：141 / 146

页数：6

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