Electrical properties of polymer Si heterojunctions

被引：40

作者：

Musa, I ^{[1
]}

Eccleston, W ^{[1
]}

机构：

[1] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3BX, Merseyside, England

来源：

THIN SOLID FILMS | 1999年 / 343卷

基金：

英国工程与自然科学研究理事会;

关键词：

Schottky barrier; poly(3-octylthiophene); semiconductor interface;

D O I：

10.1016/S0040-6090(98)01661-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metal/conjugated polymer film/silicon structures have been fabricated. Current-voltage measurements have been performed with both Pi and Au metal electrodes on n- and p-type Si substrates. The conjugated polymer was regioregular poly (3-octylthiophene) (P3OT). Rectification ratios as high as similar to 10(6) have been observed, with turn on voltages of similar to 1.5 V. Evidence of Schottky barrier formation at the Al/polymer interface, and Fowler-Nordheim tunnelling at the P3OT/p-Si interface is shown. Capacitance-voltage characteristics were obtained in the frequency range 10 Hz to 1 MHz. Strong frequency dispersion is observed which is indicative of the presence of traps. A model is proposed to explain this dispersion which shows good agreement with the experimental results. Preliminary optical results indicate that these diodes may have applications as optical sensors. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：469 / 475

页数：7

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