Immobilization of DNA probes onto gold surface and its application to fully electric detection of DNA hybridization using field-effect transistor sensor
被引:30
作者:
Ishige, Yu
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机构:Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
Ishige, Yu
Shimoda, Maki
论文数: 0引用数: 0
h-index: 0
机构:Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
Shimoda, Maki
Kamahori, Masao
论文数: 0引用数: 0
h-index: 0
机构:Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
Kamahori, Masao
机构:
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
[2] Hitachi ULSI Syst Co Ltd, Kokubunji, Tokyo 1858601, Japan
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
|
2006年
/
45卷
/
4B期
关键词:
FET sensor;
DNA probe density;
alkanethiol;
SAM;
gold electrode;
immobilization;
surface potential;
D O I:
10.1143/JJAP.45.3776
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
A field-effect transistor (FET) sensor with a gold sensing electrode (extended-gate FET sensor), on which DNA probes can be immobilized via an Au-S bond, was designed. A method of controlling the surface density of DNA probes immobilized on the bold electrode was developed using a competitive reaction between DNA probes and alkanethiols. The immobilized DNA probe, were characterized using voltammetry and a single-base extension reaction combined with bioluminescence detection. The relationship between DNA probe density and hybridization efficiency was clarified, and it was found that the optimum density for FET sensors was about 2.6 x 10(12) molecules/cm(2). The fully electric detection of hybridized target DNA (about 7 fmol) was achieved by the extended-gate FET sensor with the above DNA probe density. In addition, the surface potential in proportion to the density of both single-stranded DNA and double-stranded DNA immobilized on the gold electrode was successfully obtained using the extended-gate FET sensor.