Spectroscopic study of plasma using zirconium tetra-tert-butoxide for the plasma enhanced chemical vapor deposition of zirconium oxide

被引:35
作者
Cho, BO [1 ]
Lao, S [1 ]
Sha, L [1 ]
Chang, JP [1 ]
机构
[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2001年 / 19卷 / 06期
关键词
D O I
10.1116/1.1403717
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Plasma enhanced chemical vapor deposition of zirconium oxide using zirconium tetra-tert-butoxide (ZTB) as a metalorganic precursor, Ar as a carrier of the ZTB vapor, and O-2 as an oxidant was investigated by using optical emission spectroscopy (OES), Langmuir probe, and x-ray photoelectron spectroscopy (XPS). The electron temperature (T-e) and the O-2 to Ar flow rate ratio (O-2/Ar) were found to dominate the plasma chemistry: the T-e determined the maximum Zr and Zr+ emission intensities at an intermediate pressure of 45 mTorr, the high C/C-2 emission intensity ratio in the oxygen-rich plasma, and the transition between the dissociation-dominated chemistry at low pressures and the recombination-dominated chemistry at high pressures. The O-2/Ar ratio changed the relative abundance of various atomic and diatomic species in the plasma: both ionic and atomic Zr species were depleted with the addition of O-2 and a significant amount of ZrO and CO was produced. The O-2/Ar ratio and T-e determined the concentration ratio of C/O and C-2/O in the plasma, the production and dissociation rates of diatomic molecules (C-2, CH, CO, and OH), and the degree of decomposition. From XPS, x-ray diffraction, and OES measurements, the deposited ZrO2 was found to be stoichiometric and amorphous at O-2/Ar ratios greater than or equal to0.2, and hydrocarbon molecules rather than atomic carbon were more responsible for the carbon incorporation into the film. The carbon content in the film could be controlled by monitoring and varying the OES intensity ratio of C-2 at 516.52 nm to O at 777.42 nm. (C) 2001 American Vacuum Society.
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页码:2751 / 2761
页数:11
相关论文
共 42 条
[1]   Zirconia coatings realized by microwave plasma-enhanced chemical vapor deposition [J].
Bertrand, G ;
Mevrel, R .
THIN SOLID FILMS, 1997, 292 (1-2) :241-246
[2]   ON MASS-SPECTROSCOPIC AND EMISSION-SPECTROSCOPIC CVD PROCESS MONITORING OF ORGANOMETALLICS/O-2 DISCHARGES [J].
BREITBARTH, FW ;
BALD, J ;
RODEMEYER, S ;
SUHR, H .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1993, 13 (02) :289-309
[3]  
BRIGGS D, 1990, PRACTICAL SURFACE AN
[4]   ZrO2 film growth by chemical vapor deposition using zirconium tetra-tert-butoxide [J].
Cameron, MA ;
George, SM .
THIN SOLID FILMS, 1999, 348 (1-2) :90-98
[5]   Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications [J].
Chaneliere, C ;
Autran, JL ;
Devine, RAB ;
Balland, B .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1998, 22 (06) :269-322
[6]  
Chapman B., 1980, GLOW DISCHARGE PROCE, DOI DOI 10.1063/1.2914660
[7]  
Chen F. F., 1965, PLASMA DIAGNOSTIC TE
[8]  
CHEN HC, 1992, THIN SOLID FILMS, V223, P56
[9]  
CHU K, 2001, THESIS U CALIFORNIA
[10]   DEPENDENCE OF F-ATOM DENSITY ON PRESSURE AND FLOW-RATE IN CF4 GLOW-DISCHARGES AS DETERMINED BY EMISSION-SPECTROSCOPY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :353-356