Electrochemical evaluation of pinhole defects in TiN films prepared by r.f. reactive sputtering

被引：25

作者：

Uchida, H ^{[1
]}

Inoue, S ^{[1
]}

Koterazawa, K ^{[1
]}

机构：

[1] HIMEJI INST TECHNOL,FAC ENGN,DEPT MECH & INTELLIGENT ENGN,HIMEJI,HYOGO 67122,JAPAN

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1997年 / 234卷

关键词：

titanium nitride; rf reactive sputtering; pinhole defect; polarization curve;

D O I：

10.1016/S0921-5093(97)00233-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

TiN films were deposited onto stainless steels by r.f. reactive sputtering and they contained more or less pinhole defects. The area ratio of pinhole defects was evaluated potentiodynamically with the ratio of critical passivation current density of TiN-coated and non-coated specimen in a deaerated 0.5 kmol/m(3)H(2)SO(4) + 0.05 kmol/m(3)KSCN solution. The result coincided well with the true defect area ratio based on the optical micrographs before and after polarized anodically. Such electrochemical method was concluded to be a reliable evaluation technique for the pinhole defects of corrosion-resistible coating. (C) 1997 Elsevier Science S.A.

引用

页码：649 / 652

页数：4

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