Influence of annealing atmosphere and temperature on photoluminescence of Tb3+ or Eu3+-activated zinc silicate thin film phosphors via sol-gel method

被引：127

作者：

Zhang, QY ^{[1
]}

Pita, K ^{[1
]}

Ye, W ^{[1
]}

Que, WX ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Photon Res Grp, Microelect Div, Singapore 639798, Singapore

来源：

CHEMICAL PHYSICS LETTERS | 2002年 / 351卷 / 3-4期

关键词：

D O I：

10.1016/S0009-2614(01)01370-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of Zn2SiO4:Tb3+ or Eu3+ were deposited on silicon wafers by a sol-gel method. The films exhibited prominent green or red photoluminescence, due to the sharp and strong intra-4f(n)-shell electronic transitions. The thermogravimetric analysis curve shows a remarkable weight loss in the temperature range 50-400degreesC, and a slow loss at higher temperature. The increases in fluorescence intensity and decay lifetimes of rare-earth ions sensitive to microstructure and chemical components are attributed to OH removal, nano-crystallite formation and the increased surface roughness by treatment of temperature. Strongly enhanced photoluminescence was observed in samples annealed at 950degreesC in a nitrogen atmosphere. (C) 2002 Published by Elsevier Science B.V.

引用

页码：163 / 170

页数：8

共 21 条

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