Luminescence of pulsed laser deposited Eu doped yttrium oxide films

被引：269

作者：

Jones, SL

Kumar, D

Singh, RK

Holloway, PH

机构：

[1] Dept. of Mat. Sci. and Engineering, University of Florida, Gainesville

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 03期

关键词：

D O I：

10.1063/1.119551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Europium doped yttrium oxide (Eu:Y2O3) phosphor thin films were grown using a pulsed laser deposition (PLD) technique at varying growth conditions. The structural characterization carried out on a series of Eu:Y2O3 films grown on (100) silicon at substrate temperatures in the range of 250-600 degrees C and oxygen pressure in the range of 10(-5) Torr to 200 mTorr indicated that films were preferentially (111) oriented. Measurements of photoluminescence and cathodoluminescence properties of laser deposited Eu:Y2O3 thin films and powder used for laser target showed that the best in situ grown films were similar to 10%-22% as bright as EU:Y2O3 powder. a postdeposition annealing treatment of Eu:Y2O3 films led to further improvements in their brightness (up to similar to 70% with respect to Eu:Y2O3 powder), with cluster sizes of < 400 nm. (C) 1997 American Institute of Physics.

引用

页码：404 / 406

页数：3

共 23 条

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