GROWTH AND DIELECTRIC CHARACTERIZATION OF YTTRIUM-OXIDE THIN-FILMS DEPOSITED ON SI BY RF-MAGNETRON SPUTTERING

被引：63

作者：

CRANTON, WM

SPINK, DM

STEVENS, R

THOMAS, CB

机构：

[1] Department of Electronic and Electrical Engineering, University of Bradford, Bradford

来源：

THIN SOLID FILMS | 1993年 / 226卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90222-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of Y2O3 have been deposited by r.f.-magnetron sputtering onto 100 mm diameter n-type single crystal Si wafers. The growth conditions are discussed including an optical interferometric technique for in-situ thickness monitoring. The dielectric properties of films deposited at 60-degrees-C, 100-degrees-C and 190-degrees-C are measured, with optimum values of the relative dielectric constant and breakdown strength determined as epsilon(r) = 16 and E(bd) = 3.85 MV cm-1 respectively. Deposition was uniform with respect to film thickness over 50 cm2 (+/- 5%), and the refractive index of the Y2O3 was determined as n = 1.911

引用

页码：156 / 160

页数：5

共 19 条

[1] EXPERIMENTAL RESULTS ON THE STABILITY OF AC THIN-FILM ELECTROLUMINESCENT DEVICES [J].