YTTRIUM-OXIDE BASED METAL-INSULATOR SEMICONDUCTOR STRUCTURES ON SILICON

被引:28
作者
KALKUR, TS
KWOR, RY
DEARAUJO, CAP
机构
关键词
D O I
10.1016/0040-6090(89)90723-2
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:185 / 189
页数:5
相关论文
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MANCHANDA, L ;
GURVITCH, M .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :180-182
[5]   ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J].
OEHRLEIN, GS ;
REISMAN, A .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6502-6508
[6]  
RAJU TA, 1981, J APPL PHYS, V552, P4887