ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON

被引：68

作者：

OEHRLEIN, GS

REISMAN, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 11期

关键词：

D O I：

10.1063/1.331880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6502 / 6508

页数：7

共 16 条

[1] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].

DEAL, BE ;

FLEMING, PJ ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&

[2] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J].

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1613-1616

[3] CHEMICAL VAPOR-DEPOSITION OF TANTALUM PENTOXIDE FILMS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES [J].

KAPLAN, E ;

BALOG, M ;

FROHMANBENTCHKOWSKY, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1570-1573

[4] CONDUCTION PROCESSES IN SILICON NITRIDE [J].

KENDALL, EJM .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (22) :2509-&

[5]

MAISSEL LI, 1970, HDB THIN FILMS, P17

[6] ALPHA-PARTICLE-INDUCED SOFT ERRORS IN DYNAMIC MEMORIES [J].

MAY, TC ;

WOODS, MH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :2-9

[7]

OEHRLEIN GS, UNPUB

[8] QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY [J].

OHTA, K ;

YAMADA, K ;

SHIMIZU, K ;

TARUI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) :368-376

[9] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J].

OSBURN, CM ;

ORMOND, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :591-+

[10]

PETERSSON CS, 1980, THIN FILM INTERFACES, P290

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