CHEMICAL VAPOR-DEPOSITION OF TANTALUM PENTOXIDE FILMS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES

被引：62

作者：

KAPLAN, E ^{[1
]}

BALOG, M ^{[1
]}

FROHMANBENTCHKOWSKY, D ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,JERUSALEM 91000,ISRAEL

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 10期

关键词：

D O I：

10.1149/1.2132639

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1570 / 1573

页数：4

共 29 条

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[7] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &
[8] CO-ORDINATION COMPLEXES OF NIOBIUM AND TANTALUM .1. COMPLEX FORMATION OF NIOBIUM AND TANTALUM PENTAHALIDES AND NIOBIUM(V) OXYCHLORIDE WITH ACETYLACETONE IN ALCOHOL SOLUTIONS AND FORMATION OF OXO-DICHLORO-ACETYLACETONATO NIOBIUM(V)
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[J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1963, 25 (09): : 1099 - 1109
[9] INFRA-RED ABSORPTION IN SEMICONDUCTORS
FAN, HY
[J]. REPORTS ON PROGRESS IN PHYSICS, 1956, 19 : 107 - 155
[10] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

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