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OXIDATION TEMPERATURE-DEPENDENCE OF THE DC ELECTRICAL-CONDUCTION CHARACTERISTICS AND DIELECTRIC STRENGTH OF THIN TA2O5 FILMS ON SILICON
被引:110
作者
:
OEHRLEIN, GS
论文数:
0
引用数:
0
h-index:
0
OEHRLEIN, GS
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1986年
/ 59卷
/ 05期
关键词
:
D O I
:
10.1063/1.336468
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1587 / 1595
页数:9
相关论文
共 25 条
[1]
ARIS FC, 1973, ELECTRETS
[2]
Hammel J.J., 1969, NUCLEATION, P489
[3]
HASEGAWA H, 1983, ELECTROCHEM SOC EXT, V83, P150
[4]
EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IRENE, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
: 1613
-
1616
[5]
LEAKAGE-CURRENT INCREASE IN AMORPHOUS TA2O5 FILMS DUE TO PINHOLE GROWTH DURING ANNEALING BELOW 600-DEGREES-C
KIMURA, S
论文数:
0
引用数:
0
h-index:
0
KIMURA, S
NISHIOKA, Y
论文数:
0
引用数:
0
h-index:
0
NISHIOKA, Y
SHINTANI, A
论文数:
0
引用数:
0
h-index:
0
SHINTANI, A
MUKAI, K
论文数:
0
引用数:
0
h-index:
0
MUKAI, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(12)
: 2414
-
2418
[6]
MAISSEL LI, 1970, HDB THIN FILM TECHNO, pCH16
[7]
NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, P518
[8]
CURRENT TRANSPORT, EFFECTIVE DIELECTRIC CONSTANT, AND TEMPERATURE OF TA2O5 THIN FILMS
OCLOCK, GD
论文数:
0
引用数:
0
h-index:
0
OCLOCK, GD
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(10)
: 403
-
&
[9]
ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON
OEHRLEIN, GS
论文数:
0
引用数:
0
h-index:
0
OEHRLEIN, GS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(11)
: 6502
-
6508
[10]
SOME PROPERTIES OF CRYSTALLIZED TANTALUM PENTOXIDE THIN-FILMS ON SILICON
OEHRLEIN, GS
论文数:
0
引用数:
0
h-index:
0
OEHRLEIN, GS
DHEURLE, FM
论文数:
0
引用数:
0
h-index:
0
DHEURLE, FM
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(10)
: 3715
-
3725
←
1
2
3
→
共 25 条
[1]
ARIS FC, 1973, ELECTRETS
[2]
Hammel J.J., 1969, NUCLEATION, P489
[3]
HASEGAWA H, 1983, ELECTROCHEM SOC EXT, V83, P150
[4]
EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IRENE, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
: 1613
-
1616
[5]
LEAKAGE-CURRENT INCREASE IN AMORPHOUS TA2O5 FILMS DUE TO PINHOLE GROWTH DURING ANNEALING BELOW 600-DEGREES-C
KIMURA, S
论文数:
0
引用数:
0
h-index:
0
KIMURA, S
NISHIOKA, Y
论文数:
0
引用数:
0
h-index:
0
NISHIOKA, Y
SHINTANI, A
论文数:
0
引用数:
0
h-index:
0
SHINTANI, A
MUKAI, K
论文数:
0
引用数:
0
h-index:
0
MUKAI, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(12)
: 2414
-
2418
[6]
MAISSEL LI, 1970, HDB THIN FILM TECHNO, pCH16
[7]
NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, P518
[8]
CURRENT TRANSPORT, EFFECTIVE DIELECTRIC CONSTANT, AND TEMPERATURE OF TA2O5 THIN FILMS
OCLOCK, GD
论文数:
0
引用数:
0
h-index:
0
OCLOCK, GD
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(10)
: 403
-
&
[9]
ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON
OEHRLEIN, GS
论文数:
0
引用数:
0
h-index:
0
OEHRLEIN, GS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(11)
: 6502
-
6508
[10]
SOME PROPERTIES OF CRYSTALLIZED TANTALUM PENTOXIDE THIN-FILMS ON SILICON
OEHRLEIN, GS
论文数:
0
引用数:
0
h-index:
0
OEHRLEIN, GS
DHEURLE, FM
论文数:
0
引用数:
0
h-index:
0
DHEURLE, FM
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(10)
: 3715
-
3725
←
1
2
3
→