SOME PROPERTIES OF CRYSTALLIZED TANTALUM PENTOXIDE THIN-FILMS ON SILICON

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[2] BLATTNER RJ, 1975, METHODS SURFACE ANAL, P159

[3] STRUCTURE OF ANODIC FILMS .1. AN ELECTRON DIFFRACTION EXAMINATION OF PRODUCTS OF ANODIC OXIDATION ON TANTALUM, NIOBIUM AND ZIRCONIUM [J]. ACTA METALLURGICA, 1963, 11 (08): : 873 - &

[4] Hammel J.J., 1969, NUCLEATION, P489

[5] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616

[6] LAI SK, 1981, SEMICONDUCTOR SILICO, P416

[7] MAISSEL LI, 1970, HDB THIN FILMS, P17

[8] ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6502 - 6508

[9] QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) : 368 - 376

[10] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 591 - +

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[2] BLATTNER RJ, 1975, METHODS SURFACE ANAL, P159

[3] STRUCTURE OF ANODIC FILMS .1. AN ELECTRON DIFFRACTION EXAMINATION OF PRODUCTS OF ANODIC OXIDATION ON TANTALUM, NIOBIUM AND ZIRCONIUM [J]. ACTA METALLURGICA, 1963, 11 (08): : 873 - &

[4] Hammel J.J., 1969, NUCLEATION, P489

[5] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616

[6] LAI SK, 1981, SEMICONDUCTOR SILICO, P416

[7] MAISSEL LI, 1970, HDB THIN FILMS, P17

[8] ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6502 - 6508

[9] QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) : 368 - 376

[10] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 591 - +