Density dependence of carrier-carrier-induced intersubband scattering in GaAs/AlxGa1-xAs quantum wells

被引：31

作者：

Hartig, M ^{[1
]}

Ganière, JD

Selbmann, PE

Deveaud, B

Rota, L

机构：

[1] Swiss Fed Inst Technol, Dept Phys, Inst Micro & Optoelect, EPFL, CH-1015 Lausanne, Switzerland

[2] Ecce, I-42019 Scandino, Italy

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.60.1500

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence lifetimes of the n = 2 level in a large quantum well show a clear nonmonotonic dependence on the density of optically generated carriers. Varying the power density over five orders of magnitude we prove directly the high efficiency of carrier-carrier interaction for intersubband scattering when longitudinal-optical phonon emission is suppressed. For low densities, the observed n = 2 decay times get shorter (from 40 down to 5 ps) as the density is increased. At high densities Pauli blocking reduces significantly the intersubband scattering rates. [S0163-1829(99)06124-X].

引用

页码：1500 / 1503

页数：4

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