INITIAL THERMALIZATION OF PHOTOEXCITED CARRIERS IN GAAS STUDIED BY FEMTOSECOND LUMINESCENCE SPECTROSCOPY

被引：274

作者：

ELSAESSER, T

SHAH, J

ROTA, L

LUGLI, P

机构：

[1] UNIV MODENA,DIPARTMENTO FIS,I-41100 MODENA,ITALY

[2] UNIV ROME 2,DIPARTIMENTO INGN MECCAN,I-00173 ROME,ITALY

[3] TECH UNIV MUNICH,DEPT PHYS E11,W-8000 MUNICH 2,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.66.1757

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Relaxation of a nonequilibrium distribution of electrons and holes in GaAs following femtosecond photoexcitation is investigated via spectrally and time-resolved luminescence. A rapid onset of luminescence over a broad range shows that both electrons and holes are redistributed over a wide energy range within 100 fs, even at excitation densities as low as 10(17) cm-3. The data demonstrate carrier-carrier scattering rates higher than predicted by calculations with a statically screened interaction potential. Monte Carlo simulations using dynamical screening account for the experimental results.

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页码：1757 / 1760

页数：4

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