CARRIER-CARRIER SCATTERING IN GAAS - QUANTITATIVE MEASUREMENTS FROM HOT (E,A0) LUMINESCENCE

被引：79

作者：

KASH, JA

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.40.3455

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：3455 / 3458

页数：4

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共 17 条

[1] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS
CONWELL, EM
VASSELL, MO
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +
[2] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN
HEIBLUM, M
THOMAS, DC
KNOEDLER, CM
NATHAN, MI
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1105 - 1107
[3] PICOSECOND LUMINESCENCE MEASUREMENTS OF HOT CARRIER RELAXATION IN III-V SEMICONDUCTORS USING SUM FREQUENCY GENERATION
KASH, K
SHAH, J
BLOCK, D
GOSSARD, AC
WIEGMANN, W
[J]. PHYSICA B & C, 1985, 134 (1-3): : 189 - 197
[4] FEMTOSECOND CARRIER THERMALIZATION IN DENSE FERMI SEAS
KNOX, WH
CHEMLA, DS
LIVESCU, G
CUNNINGHAM, JE
HENRY, JE
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (11) : 1290 - 1293
[5] ENERGIES OF S EIGENSTATES IN A STATIC SCREENED COULOMB POTENTIAL
LAM, CS
VARSHNI, YP
[J]. PHYSICAL REVIEW A, 1971, 4 (05): : 1875 - &
[6] BALLISTIC INJECTION DEVICES IN SEMICONDUCTORS
LEVI, AFJ
HAYES, JR
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1609 - 1611
[7] LYON SA, 1988, SPIE C P, V942, P264
[8] HOT-ELECTRON PHOTO-LUMINESCENCE IN GAAS CRYSTALS
MIRLIN, DN
KARLIK, IJ
NIKITIN, LP
RESHINA, II
SAPEGA, VF
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (09) : 757 - 760
[9] SUBPICOSECOND BASE TRANSIT-TIME OBSERVED IN A HOT-ELECTRON TRANSISTOR (HET)
MUTO, S
IMAMURA, K
YOKOYAMA, N
HIYAMIZU, S
NISHI, H
[J]. ELECTRONICS LETTERS, 1985, 21 (13) : 555 - 556
[10] A COLLECTIVE DESCRIPTION OF ELECTRON INTERACTIONS .2. COLLECTIVE VS INDIVIDUAL PARTICLE ASPECTS OF THE INTERACTIONS
PINES, D
BOHM, D
[J]. PHYSICAL REVIEW, 1952, 85 (02): : 338 - 353