Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes

被引：124

作者：

Liu, J. P. ^{[1
,4
]}

Ryou, J. -H. ^{[1
,4
]}

Dupuis, R. D. ^{[1
,4
]}

Han, J. ^{[2
]}

Shen, G. D. ^{[2
]}

Wang, H. B. ^{[3
]}

机构：

[1] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA

[2] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Jiangsu, Peoples R China

[4] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2957667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier distributions governed by hole transport in InGaN/GaN multiple quantum well (MQW) visible light-emitting diodes (LEDs) were investigated using conventional blue LEDs and dual-wavelength blue-green LEDs. It was found that holes were dominantly distributed in the QW close to the p-GaN layer in LEDs with conventional MQW active regions at a current of 20 mA. A decrease in the thickness or the height of the quantum-well potential barrier enhanced hole injection into the MQWs located near the n-GaN layer. Reducing the thickness of a GaN quantum-well barrier between the blue QW and green QW did not degrade the electroluminescence (EL) intensity of the LED. In contrast, reducing the potential height of the barrier with material of possibly compromised quality resulted in a degradation of the EL intensity of the LED. (C) 2008 American Institute of Physics.

引用

页数：3

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