Nickel stamp fabrication using step & stamp imprint lithography

被引:24
作者
Haatainen, Tomi [1 ]
Majander, Paivi [1 ]
Riekkinen, Tommi [1 ]
Ahopelto, Jouni [1 ]
机构
[1] VTT Informat Technol, FI-02150 Espoo, Finland
关键词
nanoimprinting; nickel stamps; step & stamp imprint lithography;
D O I
10.1016/j.mee.2006.01.038
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40-100 mu m nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:948 / 950
页数:3
相关论文
共 5 条
[1]  
Ahopelto J, 2003, NAN SCI TEC, P103
[2]  
Annala P., 1996, 17 NORD SEM M 17NSM, P115
[3]   IMPRINT OF SUB-25 NM VIAS AND TRENCHES IN POLYMERS [J].
CHOU, SY ;
KRAUSS, PR ;
RENSTROM, PJ .
APPLIED PHYSICS LETTERS, 1995, 67 (21) :3114-3116
[4]   Nanoimprint lithography [J].
Chou, SY ;
Krauss, PR ;
Renstrom, PJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4129-4133
[5]   Step & stamp imprint lithography using a commercial flip chip bonder [J].
Haatainen, T ;
Ahopelto, J ;
Gruetzner, G ;
Fink, M ;
Pfeiffer, K .
EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 :874-880