Step & stamp imprint lithography using a commercial flip chip bonder

被引：18

作者：

Haatainen, T ^{[1
]}

Ahopelto, J ^{[1
]}

Gruetzner, G ^{[1
]}

Fink, M ^{[1
]}

Pfeiffer, K ^{[1
]}

机构：

[1] VTT Elect, FIN-02044 Espoo, Finland

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES IV | 2000年 / 3997卷

关键词：

nanoimprint lithography;

D O I：

10.1117/12.390036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we describe a new method suitable for large area nanoimprint lithography. In step&stamp process the pattern on a stamp is transferred into a polymer layer on the substrate by repeating a step&stamp cycle. The method is demonstrated by imprinting matrices of test structures on polymer-coated 100 mm silicon wafers. A new polymer, PPM, is used as resist in the experiments. The polymer has been developed to fulfil the demands of imprint lithography. Patterns with sizes down to 400 nm were imprinted into either 100 nm or 340 nm thick PPM resist. After thinning in oxygen plasma, the resist layer is used as etching mask or for fabrication of interdigitated aluminum fingers by lift-off.

引用

页码：874 / 880

页数：7

共 6 条

[1] Imprint lithography with sub-10 nm feature size and high throughput [J].